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參數(shù)資料
| 型號(hào)： | MS1079 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, PLASTIC, M174, 4 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 152K |
| 代理商： | MS1079 |
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1079
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
DESCRIPTION:
The MS1079 is a 50 V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Device Current
12
A
PDISS
Power Dissipation
320
W
TJ
Junction Temperature
+200
°°C
TSTG
Storage Temperature
-65 to +150
°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
0.7
°°C/W
Features
30 MHz
50 VOLTS
P
OUT = 220 W
G
P = 13 dB MINIMUM
COMMON EMITTER CONFIGURATION
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