參數(shù)資料
型號(hào): MRFG35005MT1
廠(chǎng)商: MOTOROLA INC
元件分類(lèi): 功率晶體管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
封裝: PLASTIC, CASE 466-02, PLD-1.5, 4 PIN
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 158K
代理商: MRFG35005MT1
1
MRFG35005MT1
MOTOROLA RF DEVICE DATA
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 450 mWatt
Power Gain — 11 dB
Efficiency — 25%
4.5 Watts P1dB @ 3.55 GHz
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
10.5(2)
0.07(2)
Watts
W/
°C
Gate–Source Voltage
VGS
–5
Vdc
RF Input Power
Pin
30
dBm
Storage Temperature Range
Tstg
– 65 to +150
°C
Channel Temperature(1)
Tch
175
°C
Operating Case Temperature Range
TC
– 20 to +85
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Class AB
RθJC
14.2(2)
°C/W
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22–A113
1
(1) For reliable operation, the operating channel temperature should not exceed 150
°C.
(2) Simulated.
Order this document
MRFG35005MT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
3.5 GHz, 4.5 W, 12 V
POWER FET
GaAs PHEMT
MRFG35005MT1
CASE 466–02, STYLE 1
PLD–1.5
PLASTIC
Motorola, Inc. 2003
REV 0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRFG35005MT1_06 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35005NR5 功能描述:TRANSISTOR RF FET 3.5GHZ PLD-1.5 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRFG35005NT1 功能描述:MOSFET RF 3.5GHZ 4.5W 12V 1.5PLD RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRFG35010 功能描述:TRANSISTOR RF FET 3.5GHZ NI360HF RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRFG35010ANR5 功能描述:射頻GaAs晶體管 3.5GHZ 10W GAAS PLD1.5N RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: