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參數(shù)資料
| 型號： | MRFE6VP8600HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 4/20頁 |
| 文件大?。?/td> | 777K |
| 代理商： | MRFE6VP8600HR6 |
12
RF Device Data
Freescale Semiconductor
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT
IM
D,
INT
ERM
O
DULA
TIO
N
DI
ST
OR
TION
SH
OU
LD
ER
(d
Bc)
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
1000
15
21
0
60
Pout, OUTPUT POWER (WATTS) PULSED
Figure 16. Broadband Pulsed Power Gain and Drain
Efficiency versus Output Power — 470--860 MHz
100
10
19
18
17
16
40
30
20
10
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
Gps
ηD
G
ps
,P
OWER
GAIN
(d
B)
20
50
G
ps
,P
OWER
GAIN
(d
B)
IR
L,
IN
PU
T
RETU
RN
LOSS
(d
B)
--13
--6
900
450
IRL
Gps
f, FREQUENCY (MHz)
Figure 17. Broadband Pulsed Power Gain, Drain
Efficiency and IRL versus Frequency
800
750
700
650
600
550
500
21
20
66
62
46
38
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
17
16
13
19
18
54
--5
--11
Figure 18. DVB--T (8k OFDM) Drain Efficiency, Power Gain and
IMD Shoulder versus Output Power — 470--860 MHz
5--35
Pout, OUTPUT POWER (WATTS) AVG.
35
--5
25
10
--15
40
--25
Gps
VDD =50 Vdc,IDQ = 1400 mA
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
30
0
200
15
ηD
860 MHz
15
14
850
--7
20
IMD(1)
VDD =50 Vdc,Pout = 600 W Peak, IDQ = 1400 mA
Pulse Width = 100 μsec, Duty Cycle = 10%
665 MHz
470 MHz
860 MHz
470 MHz
665 MHz
470 MHz
860 MHz
665 MHz
470 MHz
665 MHz
470 MHz
860 MHz
58
50
42
34
--10
--20
--30
400
VDD =50 Vdc,IDQ = 1400 mA
Pulse Width = 100 μsec
Duty Cycle = 10%
860 MHz
80
120
160
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6VP8600HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VP8600HSR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VS25GNR1 | 功能描述:射頻MOSFET電源晶體管 VHV6E 25W50V TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VS25LR5 | 功能描述:射頻MOSFET電源晶體管 VHV6E 25W50V NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VS25N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistor |
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