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參數(shù)資料
| 型號： | MRFE6S9060NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1265-09, TO-270-2, 3 PIN |
| 文件頁數(shù)： | 13/15頁 |
| 文件大?。?/td> | 576K |
| 代理商： | MRFE6S9060NR1 |
MRFE6S9060NR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
10
80
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
5th Order
3rd Order
20
30
40
50
1
200
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
60
70
100
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
70
0
TWOTONE SPACING (MHz)
IM3U
20
30
40
50
0.1
80
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
VDD = 28 Vdc, Pout = 60 W (PEP)
IDQ = 450 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Figure 9. Pulsed CW Output Power versus
Input Power
37
P6dB = 51.31 dBm (135.21 W)
Pin, INPUT POWER (dBm)
58
56
52
48
32
30
36
34
Actual
Ideal
50
54
27
P
out
,OUTPUT
POWER
(dBm)
P3dB = 50.39 dBm (109.4 W)
P1dB = 49.41 dBm
(87.3 W)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
AL
T1,
CHANNEL
POWER
(dBc)
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
80
Pout, OUTPUT POWER (WATTS) AVG.
20
50
60
70
110
VDD = 28 Vdc, IDQ = 450 mA
f = 880 MHz, NCDMA IS95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
ηD
100
ALT1
TC = 30_C
85
_C
25
_C
25
_C
85
_C
30
_C
25
_C
85
_C
IM3L
IM5U
IM5L
IM7U
IM7L
29
31
33
35
40
30
VDD = 28 Vdc, IDQ = 450 mA
f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
VDD = 28 Vdc, IDQ = 450 mA
Pulsed CW, 12
μsec(on)
1% Duty Cycle, f = 880 MHz
60
10
1
57
55
53
51
49
28
0
10
20
30
40
50
30
_C
Gps
30
_C
60
15
5
15
25
35
45
55
65
25
35
45
55
65
75
ACPR
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6S9060NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9125NBR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9125NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9130HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9130HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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