參數(shù)資料
型號(hào): MRFE6S9060NR1
廠(chǎng)商: FREESCALE SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封裝: ROHS COMPLIANT, PLASTIC, CASE 1265-09, TO-270-2, 3 PIN
文件頁(yè)數(shù): 12/15頁(yè)
文件大?。?/td> 576K
代理商: MRFE6S9060NR1
6
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
TYPICAL CHARACTERISTICS
0
5
10
15
20
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
980
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout = 14 Watts Avg.
960
940
920
900
880
860
70
40
20
40
50
η
D
,DRAIN
EFFICIENCY
(%
)
ηD
VDD = 28 Vdc, Pout = 14 W (Avg.)
IDQ = 450 mA, NCDMA IS95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
60
30
21
20
18
16
15
14
17
19
ALT1
840
0
5
10
15
20
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
980
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout = 28 Watts Avg.
960
940
920
900
880
860
60
40
30
40
η
D
,DRAIN
EFFICIENCY
(%
)
ηD
VDD = 28 Vdc, Pout = 28 W (Avg.)
IDQ = 450 mA, NCDMA IS95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
50
20
50
20
18
16
15
13
17
19
ALT1
840
Figure 5. Two-Tone Power Gain versus
Output Power
100
16
1
IDQ = 675 mA
Pout, OUTPUT POWER (WATTS) PEP
21
19
17
10
200
G
ps
,POWER
GAIN
(dB)
225 mA
20
18
Figure 6. Third Order Intermodulation Distortion
versus Output Power
20
1
IDQ = 225 mA
Pout, OUTPUT POWER (WATTS) PEP
100
30
40
50
10
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
10
350 mA
200
60
14
550 mA
350 mA
450 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
675 mA
450 mA
550 mA
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