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參數(shù)資料
| 型號(hào)： | MRFE6S9045NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 569K |
| 代理商： | MRFE6S9045NR1 |
6
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
TYPICAL CHARACTERISTICS
960
15
23
800
70
50
IRL
Gps
ALT1
ACPR
22
40
21
30
19
30
18
40
17
50
16
60
940
920
900
880
860
840
820
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
15
10
η
D
,DRAIN
EFFICIENCY
(%)
0
5
ηD
960
16
23
800
70
34
IRL
Gps
ALT1
ACPR
22
32
21
30
20
30
19
40
18
50
17
60
940
920
900
880
860
840
820
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
20
15
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 10 Watts Avg.
η
D
,DRAIN
EFFICIENCY
(%)
10
0
5
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 20 Watts Avg.
Figure 5. Two-Tone Power Gain versus
Output Power
200
17
24
IDQ = 525 mA
Pout, OUTPUT POWER (WATTS) PEP
22
20
10
G
ps
,POWER
GAIN
(dB)
23
21
350 mA
1
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
175 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
30
10
1
Pout, OUTPUT POWER (WATTS) PEP
10
20
200
60
40
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
50
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
20
ηD
VDD = 28 Vdc, Pout = 20 W (Avg.)
IDQ = 350 mA, NCDMA IS95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
262.5 mA
437.5 mA
19
18
100
IDQ = 175 mA
350 mA
525 mA
262.5 mA
437.5 mA
100
VDD = 28 Vdc
Pout = 10 W (Avg.) IDQ = 350 mA
NCDMA IS95 Pilot Sync, Paging
Traffic Codes 8 Through 13
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6S9045NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9046GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9046NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9060GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9060NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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