參數(shù)資料
型號(hào)： MRFE6S9045NR1
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistor
中文描述： RF功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/15頁(yè)
文件大小： 579K
代理商： MRFE6S9045NR1
MRFE6S9045NR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with fre-
quencies up to 1000 MHz. The high gain and broadband performance of this
device makes it ideal for large-signal, common-source amplifier applications
in 28 volt base station equipment.
Typical Single-Carrier N-CDMA Performance @ 880 MHz, V
DD
= 28 Volts,
I
DQ
= 350 mA, P
out
= 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.1 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — -46 dBc in 30 kHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 350 mA,
P
out
= 16 Watts Avg., Full Frequency Band (920-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5% rms
GSM
Application
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 350 mA, P
out
= 45 Watts,
Full Frequency Band (920-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 68%
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Integrated ESD Protection
225
°
C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
- 0.5, +66
Vdc
Gate-Source Voltage
V
GS
- 0.5, +12
Vdc
Maximum Operation Voltage
V
DD
32, +0
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Case Operating Temperature
T
C
150
°
C
Operating Junction Temperature
(1,2)
T
J
225
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81
°
C, 45 W CW
Case Temperature 79
°
C, 10 W CW
R
θ
JC
1.0
1.1
°
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRFE6S9045N
Rev. 0, 10/2007
Freescale Semiconductor
Technical Data
880 MHz, 10 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265-09, STYLE 1
TO-270-2
PLASTIC
MRFE6S9045NR1
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRFE6S9045NR1-CUT TAPE 制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET
MRFE6S9046GNR1 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S9046NR1 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S9060GNR1 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S9060NR1 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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