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參數(shù)資料
| 型號： | MRF949T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-75, SC-90, 3 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 298K |
| 代理商： | MRF949T1 |
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MRF949T1
4
MOTOROLA RF/IF DEVICE DATA
25
0
Figure 6. Maximum Stable/Available Gain
versus Frequency
35
20
0
5.0
10
Figure 7. Maximum Stable/Available Gain
versus Frequency
TYPICAL CHARACTERISTICS
40
30
20
–5.0
10
Figure 8. Maximum Unilateral Gain and
Forward Insertion Gain versus Frequency
45
30
20
10
Figure 9. Maximum Unilateral Gain and
Forward Insertion Gain versus Frequency
35
MSG,
MAXIMUM
ST
ABLE
GAIN;
MAG,
30
25
15
35
25
15
5.0
35
25
15
5.0
0
14
10
6.0
Figure 10. Maximum Unilateral Gain and
Forward Insertion Gain versus Collector Current
20
12
8.0
4.0
Figure 11. Maximum Unilateral Gain and
Forward Insertion Gain versus Collector Current
16
12
8.0
4.0
16
10
6.0
MAXIMUM
A
V
AILABLE
GAIN
(dB)
21
S
2,
FOR
W
ARD
INSER
TION
GAIN;
G
Umax
,
MAXIMUM
UNILA
TERAL
GAIN
(dB)
MSG,
MAXIMUM
ST
ABLE
GAIN;
MAG,
MAXIMUM
A
V
AILABLE
GAIN
(dB)
0
21
S
2,
FOR
W
ARD
INSER
TION
GAIN;
G
Umax
,
MAXIMUM
UNILA
TERAL
GAIN
(dB)
21
S
2,
FOR
W
ARD
INSER
TION
GAIN;
G
Umax
,
MAXIMUM
UNILA
TERAL
GAIN
(dB)
21
S
2,
FOR
W
ARD
INSER
TION
GAIN;
G
Umax
,
MAXIMUM
UNILA
TERAL
GAIN
(dB)
20
5.0
15
30
10
40
GUmax
14
18
0.1
f, FREQUENCY (GHz)
1.0
10
0.1
f, FREQUENCY (GHz)
1.0
10
0.1
f, FREQUENCY (GHz)
1.0
10
0.1
f, FREQUENCY (GHz)
1.0
10
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
VCE = 6.0 V
IC = 5.0 mA
MSG
MAG
MSG
VCE = 1.0 V
IC = 1.0 mA
MSG
MAG
VCE = 6.0 V
IC = 5.0 mA
VCE = 1.0 V
IC = 1.0 mA
|S21|2
GUmax
VCE = 6.0 V
IC = 5.0 mA
VCE = 1.0 V
IC = 1.0 mA
GUmax
|S21|2
LIFETIME
BUY
LAST
ORDER
25S
EP01
LAST
SHIP
26
MAR02
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF951 | 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF9511LT1 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-143 |
| MRF951V2 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF951V3 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF951V4 | 功能描述:射頻雙極小信號晶體管 RF Bipolar Trans RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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