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參數(shù)資料
| 型號： | MRF947T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Low Noise, High-Frequency Transistors |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-02, 3 PIN |
| 文件頁數(shù)： | 2/17頁 |
| 文件大小： | 309K |
| 代理商： | MRF947T1 |
MMBR941 MRF947 MRF9411 SERIES
2–2
MOTOROLA RF DEVICE DATA
MAXIMUM RATINGS
Rating
Symbol
MMBR941LT1, T3
MRF9411LT1
MRF947 Series
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PDmax
10
10
10
Vdc
Collector–Base Voltage
20
20
20
Vdc
Emitter–Base Voltage
1.5
1.5
1.5
Vdc
Power Dissipation (1) TC = 75
°
C
Derate linearly above Tcase = 75
°
C @
0.25
3.33
0.25
3.33
0.188
2.5
Watts
mW/
°
C
Collector Current — Continuous (2)
IC
50
50
50
mA
Maximum Junction Temperature
TJmax
Tstg
R
θ
JC
150
150
150
°
C
Storage Temperature
–55 to +150
–55 to +150
–55 to +150
°
C
Thermal Resistance,
Junction to Case
300
300
400
°
C/W
DEVICE MARKING
MMBR941LT1 = 7Y
MRF9411LT1 = 10
MMBR941BLT1 = 7N
MRF947AT1 = G
MRF947T1, T3 = A
MRF947BT1 = H
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(3)
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
All
V(BR)CEO
10
12
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
All
V(BR)CBO
20
23
—
Vdc
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
All
IEBO
—
—
0.1
μ
Adc
Collector Cutoff Current
(VCB = 10 V, IE = 0)
All
ICBO
—
—
0.1
μ
Adc
ON CHARACTERISTICS
(3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
(MMBR941LT1, MRF9411LT1)
(MMBR941BLT1)
hFE
50
100
—
—
200
200
—
DC Current Gain (VCE = 1.0 V, IC = 500
μ
A)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
MRF947T1, MRF947BT1
hFE1
50
—
—
—
MRF947T1, T3
MRF947AT1
MRF947BT1
hFE2
hFE3
hFE4
50
75
100
—
—
—
—
150
200
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
All
Ccb
—
0.35
—
pF
Current Gain — Bandwidth Product
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
NOTE:
1. To calculate the junction temperature use TJ = PD x R
θ
JC + TCASE. Case temperature measured on collector lead immediately adjacent to
body of package.
2. IC — Continuous (MTBF
≈
10 years).
3. Pulse width
≤
300
μ
s, duty cycle
≤
2% pulsed.
All
fT
—
8.0
—
GHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF947T3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise, High-Frequency Transistors |
| MRF949BT1 | 制造商:Motorola Inc 功能描述: |
| MRF949T1 | 制造商:Motorola Inc 功能描述: |
| MRF951 | 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF9511LT1 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-143 |
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