參數(shù)資料
型號: MRF9135LR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件頁數(shù): 8/11頁
文件大?。?/td> 377K
代理商: MRF9135LR3
6
RF Device Data
Freescale Semiconductor
MRF9135LR3
TYPICAL CHARACTERISTICS
100
8
20
1
60
Gps
IMD
VDD = 26 Vdc
IDQ = 1100 mA
f1 = 880 MHz, f2 = 880.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
G
ps
,POWER
GAIN
(dB)
18
40
16
20
14
0
12
20
10
40
10
η
D
,DRAIN
EFFICIENCY
(%)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
ηD
6
20
1
80
60
Gps
ACPR
750 kHz
VDD = 26 Vdc, IDQ = 1100 mA
f = 880 MHz
NCDMA IS95 Pilot, Sync, Paging,
Traffic Codes 8 through 13
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. N-CDMA Performance Output Power
versus Gain, ACPR, Efficiency
G
ps
,POWER
GAIN
(dB)
10
18
40
16
20
14
0
12
20
10
40
8
60
ALT
1.98 MHz
ηD
η
D
,DRAIN
EFFICIENCY
(%)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
210
1011
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
1010
109
108
120
140
160
180 190
MTTF
FACT
OR
(HOURS
x
AMPS
2 )
100
110
130
150
170
200
LIFETIME
BUY
LAST
ORDER
3
OCT
08
LAST
SHIP
14
MA
Y
09
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