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參數(shù)資料
| 型號(hào)： | MRF9180R6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 309K |
| 代理商： | MRF9180R6 |
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MRF9180R6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of this device make it ideal for large- signal, common- source amplifier
applications in 26 volt base station equipment.
Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1400 mA
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 17 dB
Efficiency — 26%
Adjacent Channel Power -
750 kHz: -45.0 dBc in 30 kHz BW
1.98 MHz: -60.0 dBc in 30 kHz BW
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
388
2.22
W
W/
°C
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.45
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
Document Number: MRF9180
Rev. 10, 5/2006
Freescale Semiconductor
Technical Data
MRF9180R6
880 MHz, 170 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9180S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9200LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N−Channel Enhancement−Mode Lateral MOSFETs |
| MRF9200LR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9200LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9210 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
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