參數(shù)資料
型號(hào): MRF9030LSR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-360S, CASE 360C-05, 2 PIN
文件頁(yè)數(shù): 9/12頁(yè)
文件大小: 362K
代理商: MRF9030LSR1
6
RF Device Data
Freescale Semiconductor
MRF9030LR1 MRF9030LSR1
TYPICAL CHARACTERISTICS
210
1010
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
90
110
130
150
170
190
100
120
140
160
180
200
109
100
8
20
1
60
Gps
η
IMD
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
18
40
16
20
14
0
12
20
10
40
10
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
Figure 9. MTTF Factor versus Junction Temperature
相關(guān)PDF資料
PDF描述
MRF9030MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF9030MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF9030MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF9030NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF9030S UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
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