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參數(shù)資料
| 型號： | MRF9002NR2 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 978-03, PFP-16 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 394K |
| 代理商： | MRF9002NR2 |
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INFORMA
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MRF9002NR2
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
15
35
0
17
Gps
Pout
VDS = 26 Vdc
IDQ = 25 mA
f = 960 MHz
Single-Tone
G
ps
,POWER
GAIN
(dB)
33
19.25
31
19
29
18.75
27
18.5
25
18.25
23
18
21
17.75
19
17.5
17
17.25
19.5
2
4
6
8
10
12
14
985
25
41
925
10 dBm
VDS = 26 Vdc
IDQ = 25 mA
Single-Tone
P
out
,OUTPUT
POWER
(dBm)
39
37
35
33
31
29
27
975
965
955
945
935
15 dBm
Pin = 20 dBm
Pin, INPUT POWER (dBm)
Figure 4. Output Power and Power Gain
versus Input Power
P out
,OUTPUT
POWER
(dBm)
Pout, OUTPUT POWER (dBm)
Figure 5. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
30
19.9
20.3
22
-32
-28
Gps
IMD
Pout = 2 W (PEP)
IDQ = 25 mA
f1 = 960.0 MHz, f2 = 960.1 MHz
VDS, DRAIN SOURCE SUPPLY (VOLTS)
Figure 6. Power Gain and Intermodulation Distortion
versus Supply Voltage
G
ps
,POWER
GAIN
(dB)
20.2
-29
20.1
-30
20
-31
29
28
27
26
25
24
23
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
40
-65
-20
5
25 mA
VDS = 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
Pout, OUTPUT POWER (dBm) PEP
Figure 7. Intermodulation Distortion versus
Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
50 mA
75 mA
100 mA
-25
-30
-35
-40
-45
-50
-55
-60
35
30
25
20
15
10
40
-70
0
10
3rd Order
VDS = 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
Pout, OUTPUT POWER (dBm)
Figure 8. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
-10
-20
-30
-40
-50
-60
35
30
25
20
15
5th Order
7th Order
f, FREQUENCY (MHz)
Figure 9. Output Power versus Frequency
40
15
23
10
100 mA
VDS = 26 Vdc
f = 960 MHz
Single-Tone
22
21
20
19
18
17
16
15
20
25
30
35
25 mA
75 mA
50 mA
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