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參數(shù)資料
| 型號： | MRF8S7120NR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, OM-780-2, CASE 2021-03, 2 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 431K |
| 代理商： | MRF8S7120NR3 |
2
RF Device Data
Freescale Semiconductor
MRF8S7120NR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =70 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 460 μAdc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, ID = 600 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.0
3.8
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =2 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 600 mA, Pout = 32 W Avg., f = 768 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
18.0
19.2
21.0
dB
Drain Efficiency
ηD
35.0
38.1
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.3
—
dB
Adjacent Channel Power Ratio
ACPR
—
--37.6
--36.0
dBc
Input Return Loss
IRL
—
--18
--9
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 600 mA, Pout =32 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz
19.2
36.6
6.3
--38.3
--13
748 MHz
19.2
37.1
6.4
--38.2
--15
768 MHz
19.2
38.1
6.3
--37.6
--18
1. Part internally matched both on input and output.
(continued)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MRF8S7170N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF8S7170NR3 | 功能描述:射頻MOSFET電源晶體管 HV8 700MHz 50W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRF8S7235NR3 | 功能描述:射頻MOSFET電源晶體管 HV8 700MHZ OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S8260H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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