參數(shù)資料
型號: MRF8S26060HR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CASE 465I-02, NI-400-240, 2 PIN
文件頁數(shù): 12/14頁
文件大?。?/td> 220K
代理商: MRF8S26060HR3
MRF8S26060HR3 MRF8S26060HSR3
7
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 450 mA, Pout = 15.5 W Avg.
f
MHz
Zsource
W
Zload
W
2570
8.55 - j8.59
6.29 - j8.92
2590
8.68 - j8.39
6.27 - j8.73
2610
8.84 - j8.21
6.27 - j8.54
2630
8.99 - j8.07
6.26 - j8.37
2650
9.14 - j7.84
6.26 - j8.20
2670
9.37 - j7.70
6.24 - j8.06
2690
9.58 - j7.61
6.21 - j7.91
2710
9.80 - j7.53
6.17 - j7.78
2730
10.02 - j7.48
6.13 - j7.65
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
相關(guān)PDF資料
PDF描述
MRF8S26060HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S26120HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S26120HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S7120NR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S7170NR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF8S26060HR5 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 13.5W NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S26060HSR3 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 13.5W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S26060HSR5 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 13.5W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S26120HR3 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 27W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S26120HR5 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 27W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray