參數(shù)資料
型號： MRF8S21140HSR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù)： 10/14頁
文件大?。?/td> 214K
代理商： MRF8S21140HSR3
MRF8S21140HR3 MRF8S21140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
2060
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 34 Watts Avg.
0
-12
-24
16
20
19.5
19
-40
40
36
32
24
-20
-24
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
18.5
18
17.5
17
16.5
2080
2100
2120
2140
2160
2180
2200
2220
28
-28
-30
PARC
P
ARC
(dB)
0
-1
-2
-3
-5
ACPR
(dBc)
Figure 3. Intermodulation Distortion Products
versus Two-T one Spacing
TWO-T ONE SPACING (MHz)
10
-2 0
-3 0
-5 0
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-4 0
IM3-U
IM3-L
IM5-U
IM5-L
IM7-U
VDD = 28 Vdc, Pout = 55 W (PEP), IDQ = 970 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
Figure 4. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-1
-3
-5
40
0
-2
OUTPUT
COMPRESSION
A
T
0.01%
PROBABILITY
ON
CCDF
(dB)
20
60
80
120
21
57
45
39
33
η
D,
DRAIN
EFFICIENCY
(%)
ηD
ACPR
PARC
ACPR
(dBc)
-50
-20
-30
-25
-35
19
G
ps
,POWER
GAIN
(dB) 17
18
16
15
13
Gps
-2 dB = 44 W
-3 dB = 60 W
-60
-1 0
IM7-L
15.5
15
-32
-36
-18
-4
14
-4
100
-40
51
-1 dB = 32 W
-6
-45
27
VDD = 28 Vdc, Pout = 34 W (Avg.), IDQ = 970 mA
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
VDD = 28 Vdc, IDQ = 970 mA, f = 2140 MHz
Single-Carrier W-CDMA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF8S21140HSR5 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S21172HR3 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 42W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S21172HR3_12 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF8S21172HR5 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 42W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S21172HSR3 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 42W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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