參數(shù)資料
型號: MRF8S18260HSR6
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-1230S, CASE 375J-02, 8 PIN
文件頁數(shù): 8/14頁
文件大?。?/td> 371K
代理商: MRF8S18260HSR6
MRF8S18260HR6 MRF8S18260HSR6
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ = 1600 mA, 1805--1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
260
W
IMD Symmetry @ 100 W PEP, Pout where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
21
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
64
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout =74 W Avg.
GF
0.4
dB
Gain Variation over Temperature
(--30
°Cto+85°C)
G
0.011
dB/
°C
Output Power Variation over Temperature
(--30
°Cto+85°C)
P1dB
0.01 (1)
dB/
°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
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