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參數(shù)資料
| 型號： | MRF8372R1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | M240, SO-8 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 58K |
| 代理商： | MRF8372R1 |
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MRF8372, R1, R2
MRF8372G, R1, R2
Rev A 9/2005
* G Denotes RoHS Compliant, Pb Free Terminal Finish
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed primarily for wideband large signal stages in
the 800 MHz and UHF frequency ranges.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
16
V
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current
200
mA
PD
Total Device Dissipation @ TC = 50C
2.2
W
TSTG
Storage Junction Temperature Range
-65 to +150
C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-Case
45
°C/W
SO-8
Features
Specified @ 12.5V, 870 MHz characteristics
Output Power = 750 mW
Minimum Gain = 8.0dB
Efficiency 60% Typical
Cost Effective SO-8 package
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF8372G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF8372R2G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF8372 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF837 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF837G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8372R2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF837G | 制造商:Microsemi Corporation 功能描述:MRF837G - Bulk |
| MRF837GT | 制造商:Microsemi Corporation 功能描述:MRF837GT - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF837T | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF838A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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