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參數(shù)資料
| 型號： | MRF837G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, M238, MACRO-X-4 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 54K |
| 代理商： | MRF837G |
MRF837
MRF837G
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
* G Denotes RoHS Compliant, Pb Free Terminal Finish
DESCRIPTION: Designed primarily for wideband large signal stages in
the 800 MHz and UHF frequency ranges.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
16
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current
200
mA
PD
Total Device Dissipation @ TC = 50C
2.5
W
TSTG
Storage Junction Temperature Range
-65 to +150
C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-Case
40
°C/W
Macro X
Features
Specified @ 12.5V, 870 MHz characteristics
Output Power = 750 mW
Minimum Gain = 8.0dB
Efficiency 60% Typical
Cost Effective Macro-X package
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
相關(guān)PDF資料 |
PDF描述 |
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| MRF837 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF839 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF841 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF844 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF846 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF837GT | 制造商:Microsemi Corporation 功能描述:MRF837GT - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF837T | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF838A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF839F | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF840 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
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