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參數(shù)資料
| 型號： | MRF7P20040HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 488K |
| 代理商： | MRF7P20040HSR3 |
10
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
VDD =28 Vdc,IDQA = 150 mA
f
MHz
Max Pout (1)
Zsource
Zload
Watts
dBm
1805
35
45.4
2.2 -- j9.3
17.1 -- j7.9
1880
35
45.5
2.3 -- j11.3
14.0 -- j4.2
1930
35
45.5
2.4 -- j13.0
14.7 -- j5.9
2025
35
45.5
3.5 -- j17.3
15.5 -- j8.0
2110
34
45.3
3.8 -- j20.6
15.4 -- j9.3
2200
35
45.5
5.6 -- j25.8
14.4 -- j9.4
(1) Maximum output power measurement reflects pulsed 3 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Figure 14. Carrier Side Load Pull Performance —
Maximum P3dB Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =28 Vdc,IDQA = 150 mA
f
MHz
Max Eff. (1)
%
Zsource
Zload
1805
66.6
2.2 -- j9.3
17.6 + j9.5
1880
70.1
2.3 -- j11.3
16.1 + j9.8
1930
69.8
2.4 -- j13.0
14.2 + j8.9
2025
67.7
3.5 -- j17.3
13.8 + j6.2
2110
67.9
3.8 -- j20.6
11.5 + j3.9
2200
70.3
5.6 -- j25.8
9.6 -- j0.6
(1) Maximum efficiency measurement reflects pulsed 3 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Figure 15. Carrier Side Load Pull Performance —
Maximum Efficiency Tuning
Z source
Z load
Device
Under
Test
Output
Load Pull
Tuner
Input
Load Pull
Tuner
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7P20040HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2GHZ 40W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S15100HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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