參數(shù)資料
型號: MRF7P20040HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN
文件頁數(shù): 13/16頁
文件大?。?/td> 488K
代理商: MRF7P20040HSR3
6
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
--10
--20
14
19
10
60
50
40
30
20
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
G
ps
,P
OWER
GAIN
(d
B)
18.5
18
10
50
AC
PR
(d
Bc)
16
15
14.5
0
--30
--40
--50
Figure 8. Broadband Frequency Response
--4
20
1450
f, FREQUENCY (MHz)
VDD =32 Vdc
Pin =0 dBm
IDQA = 150 mA
VGSB =1.5 Vdc
16
12
8
1575
GAIN
(d
B)
Gain
1700
1825
1950
2075
2200
2325
2450
IRL
--40
--4
--10
--16
--22
--28
IRL
(dB)
4
--34
2025 MHz
2017.5 MHz
f = 2010 MHz
ηD
2010 MHz
2017.5 MHz
2025 MHz
2017.5 MHz
2010 MHz
VDD =32 Vdc,IDQA = 150 mA
VGSB = 1.5 Vdc, Single--Carrier
W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01%
Probability on CCDF
17.5
17
16.5
15.5
55
45
35
25
15
--5
--15
--25
--35
--45
0
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