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參數(shù)資料
| 型號： | MRF6VP121KHSR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375E-04, NI-1230S, 4 PIN |
| 文件頁數(shù)： | 14/20頁 |
| 文件大小： | 1167K |
| 代理商： | MRF6VP121KHSR6 |
MRF6VP121KHR6 MRF6VP121KHSR6
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Pulsed RF Performance — 785 MHz (In Freescale 785 MHz Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 1000 W
Peak (100 W Avg.), f = 785 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
—
18.9
—
dB
Drain Efficiency
ηD
—
57.8
—
%
Input Return Loss
IRL
—
--16.6
—
dB
Pulsed RF Performance — 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 1000 W
Peak (100 W Avg.), f = 1030 MHz, Mode--S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec Off, Repeated Every 40 msec, 6.4% Overall Duty
Cycle
Power Gain
Gps
—
19.8
—
dB
Drain Efficiency
ηD
—
59.0
—
%
Burst Droop
BDrp
—
0.21
—
dB
Pulsed RF Performance — 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 1000 W
Peak (100 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
—
21.4
—
dB
Drain Efficiency
ηD
—
56.3
—
%
Input Return Loss
IRL
—
--25.3
—
dB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP21KHR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP21KHR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP21KHR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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