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參數(shù)資料
| 型號： | MRF6V10250HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 2 PIN |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 626K |
| 代理商： | MRF6V10250HSR3 |
N
O
TR
E
CO
MMENDED
F
O
RN
E
W
D
E
S
IG
N
NOT
RECOMMENDED
F
OR
NEW
D
ESIGN
6
RF Device Data
Freescale Semiconductor
MRF6V10250HSR3
TYPICAL CHARACTERISTICS
6
0
400
0
25_C
85_C
3
1
200
100
Pin, INPUT POWER (WATTS) PULSED
Figure 9. Pulsed Output Power versus
Input Power
P out
,O
UT
PU
T
POWER
(W
ATTS)
PU
LSED
24
300
18
24
50
30
70
100
60
50
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
22
400
25_C
TC =--30_C
85_C
Gps
40
250
107
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 250 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 10%, and ηD = 60%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
106
105
103
110
130
150
170
190
MTTF
(H
OU
RS
)
210
230
5
TC =--30_C
20
18
55_C
VDD =50 Vdc
IDQ = 250 mA
f = 1090 MHz
Pulse Width = 100 μsec
Duty Cycle = 10%
VDD =50 Vdc,IDQ = 250 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
104
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V10250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12250HR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12250HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12250HSR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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