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參數(shù)資料
| 型號(hào)： | MRF6V10250HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 2 PIN |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大小： | 626K |
| 代理商： | MRF6V10250HSR3 |
N
O
TR
E
CO
MMENDED
F
O
RN
E
W
D
E
S
IG
N
NOT
RECOMMENDED
F
OR
NEW
D
ESIGN
MRF6V10250HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
0.1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
1
50
1
TC =25°C
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
10
1
40
100
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
100
TJ = 200°C
TJ = 150°C
TJ = 175°C
24
50
30
100
22
20
70
60
50
40
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
16
400
Gps
48
58
26
56
55
54
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
57
53
52
51
50
28
30
32
34
36
38
P out
,O
UT
PU
T
POWER
(d
Bm)
PU
LSED
P3dB = 54.94 dBm (311 W)
Actual
Ideal
P1dB = 54.55 dBm (285 W)
17
23
50
22
21
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
100
20
IDQ =1 A
400
750 mA
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
VDD =30 V
14
22
50
16
21
35 V
20
45 V
100
400
50 V
49
18
19
18
500 mA
250 mA
19
18
17
15
VDD =50 Vdc,IDQ = 250 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
IDQ = 250 mA, f = 1090 MHz
Pulse Width = 100 μsec
Duty Cycle = 10%
40 V
VDD =50 Vdc,IDQ = 250 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
VDD = 50 Vdc, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
300
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V10250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12250HR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12250HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12250HSR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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