參數(shù)資料
型號(hào)： MRF6S21060NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4
文件頁(yè)數(shù)： 3/20頁(yè)
文件大?。?/td> 870K
代理商： MRF6S21060NR1
MRF6S21060NR1 MRF6S21060NBR1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
-60
0
Pout, OUTPUT POWER (WATTS) AVG.
0
30
-1 0
25
-2 0
15
03
9
10
-5 0
Figure 18. 3-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
AL
T/ACPR
(dBc)
-3 0
-4 0
1
5
Adj-U
η
D
,DRAIN
EFFICIENCY
(%)
ηD
3-Carrier TD-SCDMA
VDD = 28 V, IDQ = 555 mA
f = 2017.5 MHz
Alt-U
Alt-L
26
45
7
8
20
Adj-L
-58
0
Pout, OUTPUT POWER (WATTS) AVG.
-1 8
25
-2 6
20
15
0.5
10
-5 0
Figure 19. 6-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
-3 4
-4 2
1.5
5
Adj-L
η
D
,DRAIN
EFFICIENCY
(%)
ηD
Alt-U
Alt-L
AL
T/ACPR
(dBc)
Adj-U
2.5
3.5
4.5
5.5
6.5
7.5
6-Carrier TD-SCDMA
VDD = 28 V, IDQ = 560 mA
f = 2017.5 MHz
TD-SCDMA TEST SIGNAL
-80
-130
-30
(dBm)
-40
-50
-60
-70
-90
-100
-1 10
-120
1.5 MHz
Center 2.0175 GHz
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3-Carrier TD-SCDMA Spectrum
1.28 MHz
Channel BW
-80
-130
-30
(dBm)
-40
-50
-60
-70
-90
-100
-1 10
-120
2.5 MHz
Center 2.0175 GHz
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6-Carrier TD-SCDMA Spectrum
1.28 MHz
Channel BW
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
-AL T1 in
1.28 MHz BW
-1.6 MHz Offset
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
-AL T1 in
1.28 MHz BW
-1.6 MHz Offset
-AL T2 in
1.28 MHz BW
-3.2 MHz Offset
-AL T2 in
1.28 MHz BW
-3.2 MHz Offset
相關(guān)PDF資料
PDF描述
MRF6S21060NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S21100HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S21100HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S21100NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S21140HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S21060NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21100HR3 功能描述:射頻MOSFET電源晶體管 HV6 23W W-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21100HR5 功能描述:射頻MOSFET電源晶體管 HV6 23W W-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21100HS 制造商:FREESCALE-SEMI 功能描述:
MRF6S21100HSR3 功能描述:射頻MOSFET電源晶體管 HV6 23W W-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*