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參數(shù)資料
| 型號： | MRF6S21050LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-400, CASE 465E-04, 2 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 392K |
| 代理商： | MRF6S21050LR3 |
MRF6S21050LR3 MRF6S21050LSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
60
10
20
40
50
2200
2100
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 11.5 Watts
2190
2160
2150
2140
2130
2120
2110
15.4
16.4
42
30
28
26
24
22
34
36
40
η
D
,DRAIN
EFFICIENCY
(%)
ηD
16.3
16.2
16.1
16
15.9
15.8
15.7
15.6
15.5
2170 2180
38
32
30
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
35
10
15
25
30
2200
2100
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 23 Watts
2190
2160
2150
2140
2130
2120
2110
15
16
34
41
40
39
38
37
26
28
32
η
D
,DRAIN
EFFICIENCY
(%)
ηD
15.9
15.8
15.7
15.6
15.5
15.4
15.3
15.2
15.1
2170 2180
30
24
20
Figure 5. Two-Tone Power Gain versus
Output Power
10
13.5
17.5
0.1
IDQ = 675 mA
560 mA
Pout, OUTPUT POWER (WATTS) PEP
1
100
G
ps
,POWER
GAIN
(dB)
17
16.5
16
15.5
15
14.5
14
450 mA
335 mA
225 mA
VDD = 28 Vdc, f1 = 2135 MHz
f2 = 2145 MHz, TwoTone
Measurements, 10 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10
0.1
10
20
30
40
100
60
50
1
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
IDQ = 225 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
675 mA
450 mA
560 mA
335 mA
VDD = 28 Vdc, Pout = 11.5 W (Avg.)
IDQ = 450 mA, 2Carrier WCDMA
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
VDD = 28 Vdc, Pout = 23 W (Avg.)
IDQ = 450 mA, 2Carrier WCDMA
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S21060NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S21060NBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S21100HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S21100HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S21100NBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S21050LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21050LR5 | 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21050LS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S21050LSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21050LSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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