參數(shù)資料
型號(hào)： MRF6S21050LR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-400, CASE 465E-04, 2 PIN
文件頁數(shù)： 11/11頁
文件大小： 392K
代理商： MRF6S21050LR3
MRF6S21050LR3 MRF6S21050LSR3
9
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465E-04
ISSUE F
NI-400
MRF6S21050LR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060
±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52
±0.13) x 45° CHAMFER.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
2X D
N (LID)
E
R (LID)
F
2X K
A
T
C
M
B
M
bbb
A M
T
H
B
G
A
M
A
M
ccc
B M
T
M
A
M
bbb
B M
T
1
2
3
2X
Q
M
(INSULATOR)
S
(INSULATOR)
M
A
M
ccc
B M
T
M
A
M
aaa
B M
T
M
A
M
aaa
B M
T
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.795
.805
20.19
20.44
INCHES
B
.380
.390
9.65
9.9
C
.125
.163
3.17
4.14
D
.275
.285
6.98
7.24
E
.035
.045
0.89
1.14
F
.004
.006
0.10
0.15
G
H
.057
.067
1.45
1.7
K
.092
.122
2.33
3.1
M
.395
.405
10
10.3
N
.395
.405
10
10.3
Q
.120
.130
3.05
3.3
R
.395
.405
10
10.3
S
.395
.405
10
10.3
aaa
bbb
ccc
.600 BSC
15.24 BSC
.005 BSC
0.127 BSC
.010 BSC
0.254 BSC
.015 BSC
0.381 BSC
SEE NOTE 4
CASE 465F-04
ISSUE E
NI-400S
MRF6S21050LSR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
E
F
2X K
M
A
M
bbb
B M
T
A
T
C
H
B
A
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.395
.405
10.03
10.29
INCHES
B
.395
.405
10.03
10.29
C
.125
.163
3.18
4.14
D
.275
.285
6.98
7.24
E
.035
.045
0.89
1.14
F
.004
.006
0.10
0.15
H
.057
.067
1.45
1.70
K
.092
.122
2.34
3.10
M
.395
.405
10.03
10.29
S
.395
.405
10.03
10.29
aaa
.005 REF
0.127 REF
2X D
M
A
M
ccc
B M
T
bbb
.010 REF
0.254 REF
ccc
.015 REF
0.38 REF
N
.395
.405
10.03
10.29
R
.395
.405
10.03
10.29
M
A
M
ccc
B M
T
M
A
M
aaa
B M
T
N (LID)
M (INSULATOR)
(FLANGE)
3
B
(FLANGE)
R (LID)
S (INSULATOR)
M
A
M
aaa
B M
T
相關(guān)PDF資料
PDF描述
MRF6S21060NR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S21060NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S21100HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S21100HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S21100NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S21050LR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR5 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21050LS 制造商:Freescale Semiconductor 功能描述:
MRF6S21050LSR3 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21050LSR5 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*