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參數(shù)資料
| 型號： | MRF6S19100NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, 4 PIN |
| 文件頁數(shù)： | 15/16頁 |
| 文件大?。?/td> | 606K |
| 代理商： | MRF6S19100NBR1 |
8
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
f
MHz
Zsource
Ω
Zload
Ω
1930
1960
1990
1.74 - j3.11
1.63 - j2.55
1.67 - j2.85
2.51 - j4.80
2.31 - j4.54
2.12 - j4.20
VDD = 28 Vdc, IDQ = 950 mA, Pout = 22 W Avg.
Zo = 5 Ω
f = 1990 MHz
f = 1930 MHz
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zload
Zsource
f = 1930 MHz
f = 1990 MHz
Figure 15. Series Equivalent Source and Load Impedance
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S19100NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 22W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19120H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S19120HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19120HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19120HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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