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參數(shù)資料
| 型號(hào)： | MRF6S18140HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 435K |
| 代理商： | MRF6S18140HSR3 |
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MRF6S18140HR3 MRF6S18140HSR3
11
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2006
Initial Release of Data Sheet
1
Dec. 2008
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 6
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
1.1
Dec. 2009
Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change
Notification number, PCN13232, p. 1, 2
Data sheet archived. Part no longer manufactured.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S19060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S19060NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S19100HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S19100HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S19100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S18140HSR5 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S1900HSR3 | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19060GN | 制造商:Freescale Semiconductor 功能描述:MRF6S19060GN - Bulk |
| MRF6S19060GNR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 12W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19060MBR1 | 功能描述:MOSFET RF N-CH 28V 12W TO272-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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