參數(shù)資料
型號(hào)： MRF6S18100NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
文件頁數(shù)： 18/21頁
文件大?。?/td> 764K
代理商： MRF6S18100NR1
6
RF Device Data
Freescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
TYPICAL CHARACTERISTICS — 1930-1990 MHz
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
Figure 8. EVM versus Frequency
100
8
18
1
0
50
VDD = 28 Vdc
IDQ = 900 mA
f = 1960 MHz
TC = 30_C
30
_C
25
_C
85
_C
10
16
14
12
10
40
30
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. EVM and Drain Efficiency versus
Output Power
50
60
65
70
75
1920
85
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
f, FREQUENCY (MHz)
Pout = 61 W Avg.
44 W Avg.
20 W Avg.
VDD = 28 Vdc
IDQ = 700 mA
Pout, OUTPUT POWER (WATTS) AVG.
100
4
12
VDD = 28 Vdc
IDQ = 700 mA
f = 1960 MHz
EDGE Modulation
8
6
0
10
1
2
20
60
40
30
0
10
85
_C
Gps
TC = 30_C
25
_C
85
_C
75
40
0
Pout, OUTPUT POWER (WATTS)
50
55
60
65
70
20
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
η
D
,DRAIN
EFFICIENCY
(%)
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
2000
0
5
3
1
1980
1960
1940
1920
4
2
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
SPECTRAL
REGROWTH
@
400
kHz
(dBc)
SPECTRAL
REGROWTH
@
400
kHz
AND
600
kHz
(dBc)
25
_C
85
_C
10
50
EVM
25
_C
1940
1960
1980
2000
VDD = 28 Vdc
IDQ = 700 mA
f = 1960 MHz
EDGE Modulation
Pout = 61 W Avg.
44 W Avg.
20 W Avg.
61 W Avg.
44 W Avg.
20 W Avg.
f, FREQUENCY (MHz)
40
60
80
100
VDD = 28 Vdc, IDQ = 700 mA
f = 1960 MHz, EDGE Modulation
85
_C
25
_C
85
55
0
Pout, OUTPUT POWER (WATTS)
60
70
75
80
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL
REGROWTH
@
600
kHz
(dBc)
20
40
60
80
100
65
SR @ 400 kHz
SR @ 600 kHz
TC = 30_C
55
80
1900
2020
45
VDD = 28 Vdc, IDQ = 700 mA
f = 1960 MHz, EDGE Modulation
ηD
TC = 30_C
相關(guān)PDF資料
PDF描述
MRF6S18140HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S18100NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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