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參數(shù)資料
| 型號： | MRF6S18100NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN |
| 文件頁數(shù)： | 13/21頁 |
| 文件大小： | 764K |
| 代理商： | MRF6S18100NR1 |
20
RF Device Data
Freescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Dec. 2008
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for
standardization across products, p. 1
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part
numbers, p. 3, 9
Removed lower voltage tests from Fig. 6, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 5
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
Replaced Case Outline 1486-03, Issue C, with 1486-03, Issue D, p. 14-16. Added pin numbers 1 through
4 on Sheet 1.
Replaced Case Outline 1484-04, Issue D, with 1484-04, Issue E, p. 17-19. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
Added Product Documentation and Revision History, p. 20
相關PDF資料 |
PDF描述 |
|---|---|
| MRF6S18140HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S18140HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S19060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S19060NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S19100HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S18100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18140HR3 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S18140HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18140HR5 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S18140HSR3 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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