參數(shù)資料
型號(hào)： MRF6P23190HR6
廠(chǎng)商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
文件頁(yè)數(shù)： 8/11頁(yè)
文件大?。?/td> 431K
代理商： MRF6P23190HR6
6
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
TYPICAL CHARACTERISTICS
400
11
17
1
0
60
Pout, OUTPUT POWER (WATTS) CW
10
16
14
12
50
40
30
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB) 15
13
VDD = 28 Vdc
IDQ = 1900 mA
f = 2350 MHz
ηD
Gps
IM3
(dBc),
ACPR
(dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
0
0.1
7th Order
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 190 W (PEP)
IDQ = 1900 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
5th Order
3rd Order
20
30
40
50
1
100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
55
Pout, OUTPUT POWER (WATTS) AVG.
36
25
35
24
18
40
6
10
200
45
47
63
P3dB = 55.1 dBm (325.54 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1900 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2350 MHz
59
55
51
49
39
37
43
41
Actual
Ideal
61
57
53
35
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
P
out
,OUTPUT
POWER
(dBm)
G
ps
,POWER
GAIN
(dB)
VDD = 24 V
300
10
15
0
12
11
50
13
14
IDQ = 1900 mA
f = 2350 MHz
30
50
ηD
ACPR
28 V
32 V
45
1
30
100
150
200
10
20
12
30
_C
TC = 30_C
85
_C
25
_C
TC = 30_C
85
_C
25
_C
85
_C
30
_C
100
30
_C
25
_C
85
_C
100
250
VDD = 28 Vdc, IDQ = 1900 mA
f1 = 2345 MHz, f2 = 2355 MHz
2Carrier WCDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
25
_C
10
49
P6dB = 55.73 dBm (374.11 W)
P1dB = 54.5 dBm (283.85 W)
85
_C
65
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