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參數(shù)資料
| 型號： | MRF6P23190HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 431K |
| 代理商： | MRF6P23190HR6 |
4
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
Figure 2. MRF6P23190HR6 Test Circuit Component Layout
R1
CUT
OUT
AREA
MRF6P23190H
Rev. 3
C12 C11C10* C9*
B1
B2
C5
C2
C1
C6
B3
B4
C13*
C14*
C16 C15
R2
C25
C26
C22
C23 C24
C28
C8
C3
C4
C27
C17
C18 C19
C20 C21
C7
*Stacked.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P24190HR5 | 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P24190HR6 | 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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