參數(shù)資料
型號(hào)： MRF5S9100MR1
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封裝： PLASTIC, CASE 1486-03, 4 PIN
文件頁數(shù)： 5/12頁
文件大?。?/td> 426K
代理商： MRF5S9100MR1
MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1
MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22-A113
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 A)
VGS(th)
2
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 950 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
—
0.21
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs
—
7
—
S
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
70
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.2
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg. N-CDMA, f = 880 MHz,
Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 kHz Offset. Peak/Avg.
Ratio = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
18
19.5
—
dB
Drain Efficiency
ηD
26
28
—
%
Adjacent Channel Power Ratio
ACPR
—
-46.8
-45
dBc
Input Return Loss
IRL
—
-19
-9
dB
(1) Part is internally input matched.
相關(guān)PDF資料
PDF描述
MRF5S9101MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF5S9101NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF5S9101NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9101MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S9101MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S9100N 制造商:FREESCALE-SEMI 功能描述:
MRF5S9100NBR1 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9100NR1 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9101MBR1 功能描述:MOSFET RF N-CH 26V 100W TO2724 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S9101MR1 功能描述:MOSFET RF N-CH 26V 100W TO2704 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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