參數(shù)資料
型號： MRF5S9100MR1
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封裝： PLASTIC, CASE 1486-03, 4 PIN
文件頁數(shù)： 3/12頁
文件大?。?/td> 426K
代理商： MRF5S9100MR1
MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1
MOTOROLA RF DEVICE DATA
TO-272 WB-4
PLASTIC
MRF5S9100NBR1(MBR1)
CASE 1484-02
ISSUE A
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE H.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.
DATUM
PLANE
Y
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.100
.104
2.54
2.64
INCHES
D2
.600
15.24
E2
.270
6.86
D
.928
.932
23.57
23.67
D1
E
.551
.559
14
14.2
E1
.353
.357
8.97
9.07
b1
.164
.170
4.17
4.32
c1
.007
.011
.18
.28
e
r1
.063
.068
1.60
1.73
aaa
.106 BSC
.004
2.69 BSC
.10
B
A
E1
D
4X
b1
D1
E
GATE LEAD
M
aaa
CA
M
aaa
CA
D2
E2
VIEW Y-Y
4X
e
A1
.039
.043
0.99
1.09
F
A2
.040
.042
1.02
1.07
.025 BSC
0.64 BSC
A1
C
H
c1
A
ZONE J
SEATING
PLANE
.810 BSC
20.57 BSC
PIN 5
2X
r1
B
DRAIN LEAD
F
A2
7
NOTE 8
1
2
3
4
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
E3
E3
.346
.350
8.79
8.89
相關(guān)PDF資料
PDF描述
MRF5S9101MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF5S9101NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF5S9101NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9101MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S9101MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S9100N 制造商:FREESCALE-SEMI 功能描述:
MRF5S9100NBR1 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9100NR1 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9101MBR1 功能描述:MOSFET RF N-CH 26V 100W TO2724 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S9101MR1 功能描述:MOSFET RF N-CH 26V 100W TO2704 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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