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參數(shù)資料
| 型號(hào)： | MRF5S21090LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 392K |
| 代理商： | MRF5S21090LR3 |
AR
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INF
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RMA
TI
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ARCHIVE
INFORMA
TION
Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S21090LR3 MRF5S21090LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
42
45
57
30
55
53
51
49
47
32
34
36
38
40
Figure 3. 2-Carrier W-CDMA Broadband Performance
Figure 4. Two-Tone Power Gain versus
Output Power
Figure 5. 3rd Order Intermodulation Distortion
versus Output Power
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
100
12
17
1
1000 mA
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
450 mA
850 mA
650 mA
15
14
13
10
16
45
15
1
IDQ = 450 mA
Pout, OUTPUT POWER (WATTS) PEP
IM3,
3RD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
850 mA
1200 mA
650 mA
1000 mA
10
20
25
30
35
40
100
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
50
10
60
20
0.1
7th Order
TWOTONE SPACING (MHz)
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA
TwoTone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
30
35
40
45
50
55
1
25
P3dB = 51.17 dBm (130.9 W)
Pin, INPUT POWER (dBm)
P out
,
OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 850 mA
Pulsed CW, 8
sec(on), 1 msec(off)
Center Frequency = 2140 MHz
Actual
Ideal
P1dB = 50.47 dBm (111.4 W)
η
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
IM3
(dBc),
ACPR
(dBc)
G
ps
,POWER
GAIN
(dB)
,DRAINη
30
10
15
20
25
INPUT
RETURN
LOSS
(dB)
IRL,
2200
2180
2160
2140
2120
2100
2080
5
13
12
11
10
9
8
7
6
45
30
25
20
25
30
35
40
EFFICIENCY
(%)
40
35
15
14
35
VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 850 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
IDQ = 1200 mA
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| MRF5S21100HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| MRF5S21100HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100LSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21090LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21100HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21100HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21100HSR3 | 功能描述:MOSFET RF N-CHAN 28V 23W NI-780S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21100HSR5 | 功能描述:MOSFET RF N-CHAN 28V 23W NI-780S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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