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參數(shù)資料
| 型號： | MRF5S21090LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 392K |
| 代理商： | MRF5S21090LR3 |
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Fr
eescale
Semiconductor
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Freescale Semiconductor, Inc.
MRF5S21090LR3 MRF5S21090LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
Figure 1. MRF5S21090 Test Circuit Schematic
Z12
0.609″ x 0.220″ Microstrip
Z13
0.290″ x 0.106″ Microstrip
Z14
0.290″ x 0.106″ Microstrip
Z15
0.080″ x 0.025″ Microstrip
Z16
1.080″ x 0.160″ Microstrip
Z17
0.180″ x 0.080″ Microstrip
Z18
0.260″ x 0.147″ Microstrip
Z19
0.500″ x 0.080″ Microstrip
Z20
0.199″ x 0.147″ Microstrip
Z21
0.365″ x 0.080″ Microstrip
PCB
Arlon GX0300-55-22, 0.03″, εr = 2.55
Z1
1.0856″ x 0.080″ Microstrip
Z2
0.130″ x 0.080″ Microstrip
Z3
0.230″ x 0.080″ Microstrip
Z4
0.347″ x 0.208″ Microstrip
Z5
0.090″ x 0.208″ Microstrip
Z6
0.650″ x 0.176″ Taper
Z7
0.623″ x 0.610″ Microstrip
Z8
0.044″ x 0.881″ Microstrip
Z9
0.044″ x 0.869″ Microstrip
Z10
1.076″ x 0.446″ Microstrip
Z11
0.320″ x 0.393″ Microstrip
C4
R2
VGG
VDD
C13
C8
C7
C14
C15
C9
C5
C10
C1
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z3
Z6
Z7
Z8
Z9
Z11 Z12
Z16
Z17
Z19
Z21
+
DUT
R3
C3
C6
Z4
Z5
C12
C11
W1
R4
C2
Z10
Z13
Z14
Z18
Z20
Z15
Table 1. MRF5S21090 Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
C1
9.1 pF Chip Capacitor, B Case
100B9R1CP 500X
ATC
C2
8.2 pF Chip Capacitor, B Case
100B8R2CP 500X
ATC
C3
2.0 pF Chip Capacitor, B Case
100B2R0BP 500X
ATC
C4, C12
0.1 F Chip Capacitors, B Case
CDR33BX104AKWS
Kemet
C5
5.6 pF Chip Capacitor, B Case
100B5R6CP 500X
ATC
C6
5.1 pF Chip Capacitor, B Case
100B5R1CP 500X
ATC
C7
7.5 pF Chip Capacitor, B Case
100B7R5JP 500X
ATC
C8
1.2 pF Chip Capacitor, B Case
100B1R2BP 500X
ATC
C9, C10
0.56 F Chip Capacitors, B Case
700A561MP 150X
ATC
C11
1000 pF Chip Capacitor, B Case
100B102JP 500X
ATC
C13
470 F, 35 V Electrolytic Capacitor
95F4579
Newark
C14, C15
0.4 – 2.5 Variable Capacitors, Gigatrim
44F3367
Newark
R1
1 kW Chip Resistor
D5534M07B1K00R
Newark
R2
560 kW Chip Resistor
CR1206 564JT
Newark
R3, R4
12 W Chip Resistors
RM73B2B120JT
Garrett Electronics
W1
Wire Strap
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PDF描述 |
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| MRF5S21100HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100LSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21090LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21100HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21100HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21100HSR3 | 功能描述:MOSFET RF N-CHAN 28V 23W NI-780S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21100HSR5 | 功能描述:MOSFET RF N-CHAN 28V 23W NI-780S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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