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參數(shù)資料
| 型號： | MRF5S21090HR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| 中文描述： | 將使用的AB類的PCN-PCS/cellularradio和WLL應(yīng)用。 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 379K |
| 代理商： | MRF5S21090HR3 |
4
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
Figure 2. MRF5S21090HR3(HSR3) Test Circuit Component Layout
C1
R1
R2
C2
C3
C4
C5
C6
C7 C8
C9
C10
C11
C12
C13
C14
C15
MRF5S21090
Rev 5
R3
V
GG
V
DD
R4
W1
C
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF5S21090HSR3 | XTAL MTL T/H HC49/U |
| MRF5S21100HR3 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| MRF5S21100LR3 | The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21100LSR3 | The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21100HSR3 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21090HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21090HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF5S21090HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21090HSR3 | 功能描述:射頻MOSFET電源晶體管 HV5 RF LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21090HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 RF LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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