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參數(shù)資料
| 型號： | MRF5S21045MBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | PLASTIC, CASE 1484-04, 4 PIN |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 563K |
| 代理商： | MRF5S21045MBR1 |
12
RF Device Data
Freescale Semiconductor
MRF5S21045MR1 MRF5S21045MBR1
PACKAGE DIMENSIONS
TO-270 WB-4
MRF5S21045MR1
CASE 1486-03
ISSUE C
DATUM
PLANE
BOTTOM VIEW
A1
2X
D1
E3
E1
D3
E4
A2
PIN 5
NOTE 8
A
B
C
H
DRAIN LEAD
D
A
M
aaa
C
4X
b1
2X
D2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS
“D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
“D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE H.
5. DIMENSION
“b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE
“b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSION A2 APPLIES WITHIN ZONE
“J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
c1
F
ZONE J
E2
2X
A
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.100
.104
2.54
2.64
INCHES
A1
.039
.043
0.99
1.09
A2
.040
.042
1.02
1.07
D
.712
.720
18.08
18.29
D1
.688
.692
17.48
17.58
D2
.011
.019
0.28
0.48
D3
.600
15.24
E
.551
.559
14
14.2
E1
.353
.357
8.97
9.07
E2
.132
.140
3.35
3.56
E3
.124
.132
3.15
3.35
E4
.270
6.86
F
b1
.164
.170
4.17
4.32
c1
.007
.011
0.18
0.28
e
.025 BSC
.106 BSC
0.64 BSC
2.69 BSC
1
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
aaa
.004
0.10
GATE LEAD
4X
e
2X
E
SEATING
PLANE
4
2
3
NOTE 7
E5
E5
.346
.350
8.79
8.89
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| MRF5S21045MR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S21045NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S21045NBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S21090LR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21045MR1 | 功能描述:MOSFET RF N-CH 28V 10W TO270-4 RoHS:否 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21045NBR1 | 功能描述:射頻MOSFET電源晶體管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21045NR1 | 功能描述:射頻MOSFET電源晶體管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21045NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21090HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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