參數(shù)資料
型號(hào): MRF5S21045MBR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: PLASTIC, CASE 1484-04, 4 PIN
文件頁(yè)數(shù): 14/16頁(yè)
文件大小: 563K
代理商: MRF5S21045MBR1
AR
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HIVE
INF
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RMA
TI
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ARCHIVE
INFORMA
TION
MRF5S21045MR1 MRF5S21045MBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
106
110
130
160
180
200
MTTF
FACT
OR
(HOURS
x
AMPS
2 )
100
120
140 150
170
190
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK TO AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
68
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
PROBABILITY
(%)
(dB)
+20
+30
0
10
40
50
60
70
80
20
515
10
0
5
10
15
20
25
30
W CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @
$5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @
$10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
相關(guān)PDF資料
PDF描述
MRF5S21045MR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S21045NR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S21045NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S21090LR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21100HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
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