- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96053 > MRF5P21180HR6 (FREESCALE SEMICONDUCTOR INC) 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF5P21180HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 410K |
| 代理商： | MRF5P21180HR6 |
2
RF Device Data
Freescale Semiconductor
MRF5P21180HR6
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 200 Adc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage (3)
(VDS = 28 Vdc, ID = 1600 mAdc)
VGS(Q)
—
3.6
—
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance (1)
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
5
—
S
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.7
—
pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 38 W Avg., f = 2157.5 MHz,
2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3
measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
14
—
dB
Drain Efficiency
ηD
23
25.5
—
%
Intermodulation Distortion
IM3
—
--37.5
--35
dBc
Adjacent Channel Power Ratio
ACPR
—
--41
--38
dBc
Input Return Loss
IRL
—
--14
--9
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF5P21240R6 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19130HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19150HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF607 | Si, RF POWER TRANSISTOR, TO-39 |
| MRF627 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5P21180HR6_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21180R6 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21240 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF5P21240HR5 | 功能描述:MOSFET RF N-CHAN 28V 52W NI-1230 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5P21240HR6 | 功能描述:MOSFET RF N-CHAN 28V 52W NI-1230 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。