參數(shù)資料
型號： MRF5P20180R6
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CASE 375D-04, NI-1230, 4 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 364K
代理商： MRF5P20180R6
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Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5P20180R6
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 Adc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
VGS(Q)
—
3.6
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
5
—
S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.7
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA,
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz,
f2 = 1987.5 MHz)
Gps
12.5
14
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA,
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz,
f2 = 1987.5 MHz)
η
23
26
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA,
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz,
f2 = 1987.5 MHz; IM3 measured over 3.84 MHz BW @ f1 -10 MHz
and f2 +10 MHz referenced to carrier channel power.)
IM3
—
-37.5
-35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA,
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz,
f2 = 1987.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz
and f2 +5 MHz.)
ACPR
—
-41
-38
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA,
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz,
f2 = 1987.5 MHz)
IRL
—
-16
-9
dB
(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in push-pull configuration.
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