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參數資料
| 型號： | MRF5711LT1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, CASE 318A-05, 4 PIN |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 194K |
| 代理商： | MRF5711LT1 |
MMBR571LT1 MRF5711LT1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0)
V(BR)CEO
10
12
—
Vdc
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
20
—
Vdc
Emitter–Base Breakdown Voltage (IE = 50 Adc, IC = 0)
V(BR)EBO
2.5
—
Vdc
Collector Cutoff Current (VCB = 8.0 Vdc, IE = 0)
ICBO
—
10
Adc
ON CHARACTERISTICS
DC Current Gain (IC = 30 mAdc, VCE = 5.0 Vdc)
hFE
50
—
300
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MMBR571LT1
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)
MRF5711LT1,
Ccb
—
0.7
0.75
1.0
pF
Current Gain–Bandwidth Produc
(VCE = 5.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
MMBR571LT1
(VCE = 8.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
MRF5711LT1
fT
—
8.0
—
GHz
FUNCTIONAL TESTS
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBR571LT1
f = 0.5 GHz
f = 1.0 GHz
(IC = 10 mA, VCE = 6.0 Vdc)
MRF5711LT1
f = 1.0 GHz
GNF
—
16.5
10.5
13.5
—
dB
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBR571LT1
f = 0.5 GHz
f = 1.0 GHz
(IC = 10 mAdc, VCE = 6.0 Vdc)
MRF5711LT1
f = 1.0 GHz
NF
—
2.0
2.6
2.2
—
dB
Noise Figure
(VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
MRF5711LT1
NFmin
—
1.6
—
dB
Power Gain in 50
System (VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
MRF5711LT1
|S21|2
9.0
10
—
dB
Figure 1. Maximum Available Gain
versus Frequency
Figure 2. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
25
20
15
10
5
0
0.4
0.6
1
2
3
f, FREQUENCY (GHz)
G
A
MAX,
MAXIMUM
A
V
AILABLE
GAIN
(dB)
VCE = 5 V
IC = 30 mA
GAMAX +
|S21|
|S12|
(k
" (k2 – 1) ), k w 1
10
8
6
4
2
0
IC, COLLECTOR CURRENT (mA)
f T
,CURRENT
GAIN-BANDWIDTH
PRODUCT
(GHz)
10
20
30
40
50
60
70
80
90
100
VCE = 5 V
f = 1 GHz
TYPICAL CHARACTERISTICS
MMBR571LT1
ARCHIVE
INFORMA
TION
ARCHIVE
INFORMA
TION
F
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sc
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S
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I
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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相關代理商/技術參數 |
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|---|---|
| MRF5711MLT1 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 10V 0.08A 4-Pin(3+Tab) SOT-143 制造商:Microsemi Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Microsemi 功能描述:Trans GP BJT NPN 10V 0.08A 4-Pin(3+Tab) SOT-143 |
| MRF572 | 制造商:ASI 制造商全稱:ASI 功能描述:SILICON NPN RF TRANSISTOR |
| MRF577T1 | 制造商:Motorola 功能描述:MOTOROLA S7D9B |
| MRF581 | 功能描述:射頻放大器 RF Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF581_08 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
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