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參數(shù)資料
| 型號： | MRF9011MLT1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 339K |
| 代理商： | MRF9011MLT1 |
PR
EL
IM
IN
AR
Y
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1 of 1
Copyright
2000
CXXXX.PDF 2000-11-06
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MMBR901MLT1/MRF9011MLT1
RF & MICROWAVE TRANSISTORS
R F P R O D U C T S D I V I S I O N
D E S C R I P T I O N
The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
K E Y F E A T U R E S
!
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
S
!
LNA, Oscillator, Pre-Driver
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
25
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
2.0
V
IC
Device Current
30
mA
PDISS
Power Dissipation
375
mW
TJ
Junction Temperature
150
C
TSTG
Storage Temperature
-55 to +150
C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
250
C/W
M
BR
90
1M
LT
1/M
R
F9
01
1M
LT
1
!
High FTau-3.8GHz
Low noise-1.8dB@1GHz
Low cost SOT23/SOT143
package
SOT-23
MMBR901MLT1
SOT-143
MRF9011MLT1
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Symbol
Test
Conditions
Min.
Typ.
Max.
Units
BVCBO
IC = .1mA
IE = 0
25
V
BVCEO
IC =1.0mA
IB = 0
15
V
ICBO
VCB = 15V
IE = 0
50
nA
hFE
VCE = 5 V
IC = 5 mA
30
200
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Symbol
Test
Conditions
Min.
Typ.
Max.
Units
f = 1.0 MHz
VCB = 10 V
GHz
F
CB
C
FTau
NF
G
NFmin
P
0.55
3.8
1.8
13.5
VCE = 10 V I = 15 mA
C
f = 1.0 GHz
VCE = 10 V I = 5 mA
C
f = 1.0 GHz
VCE = 10 V I = 5 mA
C
f = 1.0 GHz
S 212
VCE = 6 V I = 5 mA
C
f = 1.0 GHz
12
dB
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