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參數(shù)資料
| 型號(hào)： | MRF555 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 99K |
| 代理商： | MRF555 |
1
MRF555
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the UHF
frequency range.
Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W
Common Emitter Power Gain = 12.5 dB (Typ)
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
16
Vdc
Collector–Base Voltage
VCBO
36
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
400
mAdc
Operating Junction Temperature
TJ
150
°C
Total Device Dissipation @ TC = 75°C (1, 2)
Derate above 75
°C
PD
3.0
40
Watts
mW/
°C
Storage Temperature Range
Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
25
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
16
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ICES
—
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
50
90
200
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
3.5
5.0
pF
NOTES:
(continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF555 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.
Order this document
by MRF555/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF555
1.5 W, 470 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 317D–02, STYLE 2
Motorola, Inc. 1995
REV 7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF555G | 制造商:Microsemi Corporation 功能描述:MRF555G - Bulk |
| MRF555GT | 制造商:Microsemi Corporation 功能描述:MRF555GT - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF555T | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF557 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF557G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
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