- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96052 > MRF553T VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MRF553T |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | POWER, PLASTIC, M234, MACRO PACKAGE-4 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 252K |
| 代理商： | MRF553T |
053-7019 Rev - 9-2002
MRF553
FUNCTIONAL
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
GPE
Power Gain
Test Circuit-Figure 1
Pout = 1.5 W, VCE =12.5Vdc
f = 175 MHz
11.5
13
-
dB
η
Collector Efficiency
Test Circuit-Figure 1
Pout = 1.5 W, VCE =12.5Vdc
f = 175 MHz
50
60
-
%
ψ
Load Mismatch
VSWR
≥ 10:1 All Phase Angles
Test Circuit-Figure 1
Pout = 1.5 W, VCE =12.5Vdc
f = 175 MHz
No Degradation in Output Power
-
Figure 1. 140–175 MHz Broadband Circuit Schematic, Stub tuning implemented on the input to improve match.
Microsemi fixture schematic with input match optimization will be available in the final version of the data sheet.
C1 — 36 pF Mini Underwood
C2 — 47 pF Mini Underwood
C3 — 91 pF Mini Underwood
C4 — 68 pF Mini Underwood
C5, C9 — 1.0
F Erie Red Cap Capacitor
C6, C10 — 0.1
F, 35 V Tantulum
C7 — 470 pF Chip Capacitor
C8 — 2200 pF Chip Capacitor
R1 — 4.7 k
, 1/4 W
R2 — 100
, 1/4 W
D1 — 1N4148 Diode
L1 — 3 Turns, #18 AWG, 0.210
, ID, 3/16, Length
L2, L4, L7 — 0.62
,, #18 AWG Wire Bent into “V” L3, L6 — 60 x 125 x 250 Mils Copper Pad on 27Mils
L5 — 12
H Molded Choke
L8 — 7 Turns, #18 AWG, 0.170
, ID, 7/16, Length
L9 — 1.0
,, #18 AWG Wire with 5 Ferrite Beads
B — Ferrite Bead
Thick Alumina Substrate
Board Material — Glass Teflon,
ε r = 2.56, t = 0.0625,
相關PDF資料 |
PDF描述 |
|---|---|
| MRF553 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF553 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF553G | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF555T | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF555T | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF555 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF555G | 制造商:Microsemi Corporation 功能描述:MRF555G - Bulk |
| MRF555GT | 制造商:Microsemi Corporation 功能描述:MRF555GT - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF555T | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF557 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。