- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96052 > MRF5015 (MOTOROLA INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF5015 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 319-07, 6 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 394K |
| 代理商： | MRF5015 |
LIFETIME
BUY
LAST
ORDER
15SEP01
LAST
SHIP
02APR04
MRF5015
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mAdc)
VGS(th)
1.25
2.3
3.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.375
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc )
gfs
1.2
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
33
—
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
74
—
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Crss
7
8.8
10.8
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 15 W,
f = 512 MHz
IDQ = 100 mA)
f = 175 MHz
Gps
10
—
11.5
15
—
dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 15 W,
f = 512 MHz
IDQ = 100 mA)
f = 175 MHz
η
50
—
55
—
%
Load Mismatch
(VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,
Load VSWR = 20:1, All Phase Angles at Frequency of Test)
ψ
No Degradation in Output Power
B1, B2
Ferrite Bead, Fair Rite Products
C1, C13
10
F, 50 V, Electrolytic
C2, C12
0.1
F, Chip Capacitor
C3, C4, C10, C11
120 pF, Chip Capacitor
C5, C9
0 to 20 pF, Trimmer Capacitor
C6
36 pF, Chip Capacitor
C7
43 pF, Chip Capacitor
C8
30 pF, Chip Capacitor
L1, L2
7 Turns, 24 AWG 0.116
″ ID
N1, N2
Type N Flange Mount
R1
1 k
, 1/4 W, Carbon
R2
470 k
, 1/4 W, Carbon
R3
160
, 0.1 W Chip
Z1, Z11
Transmission Line*
Z2
Transmission Line*
Z3
Transmission Line*
Z4
Transmission Line*
Z5
Transmission Line*
Z6
Transmission Line*
Z7, Z8
Transmission Line+
Z9
Transmission Line*
Z10
Transmission Line*
Board
Glass Teflon
0.060″
+ Part of Capacitor Mount Socket
*See Photomaster
Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic
C4
B1
Z6
RF
Input
N1
VGG
R1
C5
Z3
Z1
Z2
RF
Output
N2
Z11
C10
Z10
Z9
VDD
C13
C11
C12
C3
L1
L2
C9
C8
Z8
Z7
DUT
C7
Z5
C6
R3
Z4
R2
C1
C2
B1
Socket
+
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF511 | VHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-117 |
| MRF515 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39 |
| MRF5160HX | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-39 |
| MRF5160HXV | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-39 |
| MRF5175 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF502 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| MRF5035 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-CHANNEL BROADBAND RF POWER FET |
| MRF517 | 制造商:Microsemi Corporation 功能描述:MRF517 - Bulk 制造商:Motorola 功能描述:517 SEMI 制造商:Microsemi Corporation 功能描述:TRANS BIPO NPN TO-39 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-39 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF5174 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF5175 | 制造商:ASI 制造商全稱:ASI 功能描述:1NPN SILICON RF POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。