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參數(shù)資料
| 型號(hào)： | MRF5015 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 319-07, 6 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 394K |
| 代理商： | MRF5015 |
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MRF5015
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.
Guaranteed Performance at 512 MHz, 12.5 Volts
Output Power — 15 Watts
Power Gain — 10 dB Min
Efficiency — 50% Min
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
All Gold Metal for Ultra Reliability
Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
36
Vdc
Drain–Gate Voltage (RGS = 1 M
)
VDGR
36
Vdc
Gate–Source Voltage
VGS
± 20
Vdc
Drain Current — Continuous
ID
6
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
50
0.29
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
3.5
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 5 mAdc)
36
—
Vdc
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0)
IDSS
—
5
mAdc
Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0)
IGSS
—
2
Adc
(continued)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF5015/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF5015
15 W, 512 MHz, 12.5 VOLTS
N–CHANNEL BROADBAND
RF POWER FET
CASE 319–07, STYLE 3
Motorola, Inc. 1994
REV 6
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