參數(shù)資料
型號： MRF373ALR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 328K
代理商： MRF373ALR1
2
RF Device Data
Freescale Semiconductor
MRF373ALR1 MRF373ALSR1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID =1 μA)
V(BR)DSS
70
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 V, ID = 200 μA)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.3
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
—
0.41
0.45
Vdc
Dynamic Characteristics
Input Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Coss
—
49
—
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Crss
—
2
—
pF
Functional Characteristics (50 ohm system)
Common Source Power Gain
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)
Gps
16.5
18.2
—
dB
Drain Efficiency
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)
η
56
60
—
%
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF373ALR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF373ALR5 功能描述:射頻MOSFET電源晶體管 75W 860MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF373ALSR1 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS 75W NI360S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF373ALSR5 功能描述:射頻MOSFET電源晶體管 75W RF PWR LDMOS NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF373AR1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
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