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參數(shù)資料
| 型號： | MRF316 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | BROADBAND RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 133K |
| 代理商： | MRF316 |
1
MRF316
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
. . . designed primarily for wideband large–signal output amplifier stages in the
30–200 MHz frequency range.
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 80 Watts
Minimum Gain = 10 dB
Built–In Matching Network for Broadband Operation
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
35
Vdc
Collector–Base Voltage
65
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
Collector Current —
Peak
9.0
13.5
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
PD
220
1.26
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.8
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
35
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
65
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
65
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 5.0 Vdc)
hFE
10
—
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
100
130
pF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
Order this document
by MRF316/D
SEMICONDUCTOR TECHNICAL DATA
80 W, 3.0–200 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
REV 7
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| MRF317 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 35V 12A 4PIN CASE 316-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT 制造商:M/A-COM Technology Solutions 功能描述:Trans GP BJT NPN 35V 12A 4-Pin Case 316-01 |
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| MRF326 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
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